Design & Reuse
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1006 IP
951
0.0
2KByte EEPROM in SMIC 130EF
...
952
0.0
1KByte EEPROM IP with configuration 66p16w8bit
130GF_EEPROM_04 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1056 Byte (8(bit per word) x 16(words per pa...
953
0.0
1Kbyte EEPROM with configuration 64p8w16bit
180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per p...
954
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process
The ATO008KX16DB180AO15NA is organized as 8Kx16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory su...
955
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, VI- 110nm E-Flash 1.5V/3.3V Process
The ATO008KX16VI110EFM5DA I-fuse® IP is organized as 8Kx16 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 1...
956
0.0
1Kx32 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The AT1K32T40ULP6AA is organized as a 1K-bit by 32 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40ULP 1.1/2.5...
957
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in MXI- 0.1...
958
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DC is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
959
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DO is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
960
0.0
4kx8 Bits OTP (One-Time Programmable) IP, Ne-chi- LCDDr 55nm 1.2V/6V Process
The ATO0004KX8NX055LCD4NA is organized as 4K x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Nexchip LCDDr 55nm ...
961
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, TSM- 0.18µm 1.8V/5V Mixed-Signal Process
The ATO0004KX8TS180MSS3NA is organized as a 4Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in TSM- 0.18...
962
0.0
1Kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0001KX8TS040ULP5ZA is organized as 1 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
963
0.0
2kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0002KX8TS040ULP5ZH is organized as 2 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
964
0.0
2kx8 Bits OTP (One-Time Programmable) IP, VI- 0.18µm standard CMOS mixed-signal process
The AT2K8V180MM0AA is organized as a 2Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in VIS 0.18µm stand...
965
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V BCD Process
The AT4K8V150BCD0AA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15um BCD process. ...
966
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD G...
967
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GII...
968
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The AT4K8V150BCD0AB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GIII proc...
969
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/6V SOI BCD EPI Process
The ATO0004KX8VI150SOI3XX00A is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm SO...
970
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XH180TG34DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in X-FA- 0....
971
0.0
8kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XF180HMH4DA is organized as a 8k-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in X-FA- 0.18μm ...
972
0.0
4Kx9 Bits OTP (One-Time Programmable) IP, Globa-Foundr--- 12LP+ 0.8V/1.8V Process
The ATO0004KX9GF012LPP8ZA is organized as 4K-bits by 9 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Globa-Foundr--...
973
0.0
In-memory computing
CompuRAM™ provides In Memory Computing (IMC) that will enable solutions for computing at the Edge to be more power efficient. At present, sensor data ...
974
0.0
LogicEE® Embedded EEPROM in CSMC 180nm~110nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案，可在逻辑工艺上实现，而无需增加额外的光罩层次。最大支持2K字节（Byte）存储容量，并可实现位操作，同时提供高达10万次的写入及擦除次数。...
975
0.0
LogicEE® Embedded EEPROM in SMIC 180nm~55nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案，可在逻辑工艺上实现，而无需增加额外的光罩层次。最大支持2K字节（Byte）存储容量，并可实现位操作，同时提供高达10万次的写入及擦除次数。...
976
0.0
LogicFlash Pro® Embedded Flash memory IP
LogicFlash Pro® eFlash是拥有自主知识产权的嵌入式闪存技术，可实现高性能、高可靠性的大容量存储。 产品开发验证中。...
977
0.0
LogicFlash® Embedded MTP in CSMC 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
978
0.0
LogicFlash® Embedded MTP in GlobalFoundries 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
979
0.0
LogicFlash® Embedded MTP in HHGrace 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
980
0.0
LogicFlash® Embedded MTP in Nexchip 150nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
981
0.0
LogicFlash® Embedded MTP in Silterra 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
982
0.0
LogicFlash® Embedded MTP in SMIC 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
983
0.0
LogicFlash® Embedded MTP in Tower 180nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
984
0.0
LogicFlash® Embedded MTP in TSMC 180nm~130nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
985
0.0
LogicFlash® Embedded MTP in UMC 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
986
0.0
Foundry sponsored - Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k
Foundry sponsored - Single port SRAM compiler - TSMC 55 nm uLP - Memory optimized for high density and low power - Dual Voltage - compiler range up to...
987
0.0
sROMet compiler - Memory optimized for high density and high speed - compiler range up to 2M
Foundry sponsored - sROMet compiler - TSMC 55 nm HV - Non volatile memory optimized for high density and high speed - compiler range up to 2M...
988
0.0
TSMC CLN16FFC TCAM Compiler with ULVT periphery
IGMTLSV03A is a synchronous ULVT periphery high-density ternary content addressable memory (TCAM). It is developed with TSMC 16nm 0.8V/1.8V CMOS LOGIC...
989
0.0
TSMC CLN16FFC Ultra High Density One Port Register File
IGMSLRV01A is a synchronous SVT / LVT periphery ultra high density one port register file compiler. It is developed with TSMC 16 nm 0.8 V/1.8 V CMOS L...
990
0.0
TSMC CLN5FF High Density Single Port SRAM Compiler
IGMSHDY01A is a synchronous ULVT / LVT periphery high density single port SRAM compiler. It is developed with TSMC 5 nm 0.75 V/1.2 V CMOS LOGIC FinFET...
991
0.0
TSMC CLN6FF Pre-search and Pipeline Ternary Content Addressable Memory Compiler
IGMTLSX08A is a synchronous LVT / ULVT periphery high-density pre-search and pipeline ternary content addressable memory (TCAM) with column redundancy...
992
0.0
TSMC CLN6FF Ternary Content Addressable Memory Compiler with Column Redundancy
IGMTLSX07A is a synchronous LVT / ULVT periphery high-density ternary content addressable memory (TCAM) with column redundancy feature. It is develope...
993
0.0
TSMC CLN7FF Synchronous One Port Register File Compiler
The IGMSLRX01A is a synchronous, ultra-high density one port register file compiler. It is developed with TSMC 7 nm 0.75 V/1.8 V CMOS LOGIC FinFET Pro...
994
0.0
TSMC CLN7FF Ternary Content Addressable Memory Compiler with Column Redundancy
IGMTLSX06A is a synchronous LVT / ULVT periphery high-density ternary content addressable memory (TCAM) with column redundancy feature. It is develope...
995
0.0
TSMC embedded flash controller
The eSi-TSMC-Flash IP core provides an AMBA 3 AHB-lite interface to TSMC's embedded flash macros....
996
0.0
Dual Port Register File Compiler (1 Read-Only Port, 1 Write-Only Port)
Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates Dual Port Register File instances using the GLOBALFOUNDRIES 22nm FDX-PLUS CMOS...
997
0.0
Dual Port Register File Compiler (1 Read-Only Port, 1 Write-Only Port)
Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates Dual Port Register File instances using the GLOBALFOUNDRIES 22nm F...
998
0.0
Dual Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 80 k
Foundry sponsored - Dual Port SRAM compiler - TSMC 90 nm LPeF - Memory otimized for high density and low power - compiler range up to 80 k...
999
0.0
Bulk 40ULP single port SRAM Compiler - ultra low power, low power retention mode
Silicon proven, qualified and in high volume production. Single Port compiler offers the lowest retention power on the market....
1000
0.0
Bulk 40ULP Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 40 ULP BULKSRAM memory compiler generates memory instances using the premier low power 40nm process.. Each ul...